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this is information on a product in full production. october 2013 docid024154 rev 6 1/16 16 stgw60v60df, STGWT60V60DF trench gate field-stop igbt, v series 600 v, 60 a very high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? tail-less switching off ? v ce(sat) = 1.85 v (typ.) @ i c = 60 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? very fast soft recovery antiparallel diode applications ? photovoltaic inverters ? uninterruptible power supply ? welding ? power factor correction ? very high frequency converters description this device is an igbt developed using an advanced proprietary trench gate field stop structure. the device is part of the v series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. c (2 or tab) g (1) e (3) to-247 1 2 3 to-3p 1 2 3 tab table 1. device summary order code marking package packaging stgw60v60df gw60v60df to-247 tube STGWT60V60DF gwt60v60df to-3p tube www.st.com
electrical ratings stgw60v60df, STGWT60V60DF 2/16 docid024154 rev 6 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 80 (1) 1. current level is limited by bond wires a i c continuous collector current at t c = 100 c 60 a i cp (2) 2. pulse width limited by ma ximum junction temperature. pulsed collector current 240 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 80 (1) a i f continuous forward current at t c = 100 c 60 a i fp (2) pulsed forward current 240 a p tot total dissipation at t c = 25 c 375 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.4 c/w r thjc thermal resistance junction-case diode 1.14 c/w r thja thermal resistance junction-ambient 50 c/w
docid024154 rev 6 3/16 stgw60v60df, STGWT60V60DF electrical characteristics 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 60 a 1.85 2.3 v v ge = 15 v, i c = 60 a t j = 125 c 2.15 v ge = 15 v, i c = 60 a t j = 175 c 2.35 v f forward on-voltage i f = 60 a 2 2.6 v i f = 60 a t j = 125 c 1.7 v i f = 60 a t j = 175 c 1.6 v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -8000- pf c oes output capacitance - 280 - pf c res reverse transfer capacitance -170-pf q g total gate charge v cc = 480 v, i c = 60 a, v ge = 15 v, see figure 29 -334-nc q ge gate-emitter charge - 130 - nc q gc gate-collector charge - 58 - nc
electrical characteristics stgw60v60df, STGWT60V60DF 4/16 docid024154 rev 6 table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 60 a, r g = 4.7 , v ge = 15 v , see figure 28 -60-ns t r current rise time - 20 - ns (di/dt) on turn-on current slope - 2365 - a/ s t d(off) turn-off delay time - 208 - ns t f current fall time - 14 - ns e on (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses - 0.75 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 0.55 - mj e ts total switching losses - 1.3 - mj t d(on) turn-on delay time v ce = 400 v, i c = 60 a , r g = 4.7 , v ge = 15 v, t j = 175 c, see figure 28 -57-ns t r current rise time - 23 - ns (di/dt) on turn-on current slope - 2191 - a/ s t d(off) turn-off delay time - 216 - ns t f current fall time - 27 - ns e on (1) turn-on switching losses - 1.5 - mj e off (2) turn-off switching losses - 0.8 - mj e ts total switching losses - 2.3 - mj table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 60 a, v r = 400 v , v ge = 15 v , di f /dt = 1000 a/ s see figure 28 -74-ns q rr reverse recovery charge - 703 - nc i rrm reverse recovery current - 19 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 714 - a/ s e rr reverse recovery energy - 184 - j t rr reverse recovery time i f = 60 a, v r = 400 v , v ge = 15 v di f /dt = 1000 a/ s t j = 175 c, see figure 28 - 131 - ns q rr reverse recovery charge - 2816 - nc i rrm reverse recovery current - 43 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 404 - a/ s e rr reverse recovery energy - 821 - j
docid024154 rev 6 5/16 stgw60v60df, STGWT60V60DF electrical characteristics 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. temperature case figure 4. output characteristics @ 25 c figure 5. output characteristics @ 175 c figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current am17139v1 0 50 100 150 200 250 300 350 0 25 50 75 100 125 150 175 p tot (w) t c (c) am17140v1 0 10 20 30 40 50 60 70 80 0255075100125150175 i c (a) t c (c) v ge > 15 v, t j < 175 c __ am17141v1 0 50 100 150 200 01234 ic (a) v ce (v) 9 v 11 v 13 v v ge =15 v 7 v t j =25c am17142v1 0 50 100 150 200 01234 i c (a) v ce (v) v ge =15 v t j =175 c 9 v 11 v 7 v 13 v am17143v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 -50 -25 0 25 50 75 100 125 150 175 v ce(sat) (v) t j (oc) i c = 120 a i c = 60 a i c = 30 a v ge =15 v am17144v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 10 20 30 40 50 60 70 80 90 100 110 120 v ce(sat) (v) i c (a) t j = - 40 c t j = 25 c t j = 175 c v ge = 15 v
electrical characteristics stgw60v60df, STGWT60V60DF 6/16 docid024154 rev 6 figure 8. collector current vs. switching frequency figure 9. safe operating area figure 10. transfer characteristics figure 11. diode v f vs. forward current figure 12. normalized v ge(th) vs. junction temperature figure 13. normalized v (br)ces vs. junction temperature am17145v1 0 10 20 30 40 50 60 70 80 90 100 110 110 ic [a] f [khz] rectangular current shape, (duty cycle=0.5, v cc = 400v, r g =4.7 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c am17146v1 0.01 0.1 1 10 100 110100 i c (a) v ce (v) (single pulse t c =25 c, t j <=175 c; v ge =15 v) 1 s 100 s 1 ms am17146v1 -40c 0 50 100 150 200 67891011 i c (a) v ge (v) 175c t j = 25c v ce = 5v am17148v1 0.8 1.2 1.6 2 2.4 2.8 10 30 50 70 90 110 v f (v) i f (a) 175 c 25c t j = - 40c v ce = v ge i c = 1 ma am17149v1 0.6 0.7 0.8 0.9 1.0 1.1 -50 -25 0 25 50 75 100 125 150 175 v ge(th) norm t j (oc) am17150v1 0.9 1.0 1.1 -50 -25 0 25 50 75 100 125 150 175 v (br)ces norm t j (oc) i c = 2 ma
docid024154 rev 6 7/16 stgw60v60df, STGWT60V60DF electrical characteristics figure 14. capacitance variations figure 15. gate charge vs. gate-emitter voltage figure 16. switching losses vs. collector current figure 17. switching losses vs. gate resistance figure 18. switching losses vs. junction temperature figure 19. switching losses vs. collector emitter voltage am17151v1 10 100 1000 10000 0.1 1 10 c (pf) v ce (v) c res c oes c ies f= 1mhz, v ge =0 am17152v1 0 2 4 6 8 10 12 14 16 0100200300 v ge (v) qg (nc) v cc = 480v i c = 60a am17153v1 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 102030405060708090100110120 e (j) ic (a) e on e off v cc 400v, v ge = 15v, rg=4.7 , t j = 175c am17154v1 500 1000 1500 2000 2500 3000 3500 4000 4500 010203040 e (j) r g ( ) e on e off v cc =400v, v ge = 15v, i c = 60 a, t j = 175 c am17155v1 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 25 50 75 100 125 150 e (j) t j (oc) e on e off v cc =400v, v ge = 15v, i c = 60 a, rg = 4.7 e e on e off e , ,
electrical characteristics stgw60v60df, STGWT60V60DF 8/16 docid024154 rev 6 figure 20. switching times vs. collector current figure 21. switching times vs. gate resistance figure 22. reverse recovery current vs. diode current slope figure 23. reverse recovery time vs. diode current slope figure 24. reverse recovery charge vs. diode current slope figure 25. reverse recovery energy vs. diode current slope am17157v1 10 100 020406080100 t(ns) ic (a) t f t do? v cc = 400v, v ge = 15v, tj =175c, rg = 4.7 t r t don am17159v1 10 100 1000 010203040 t(ns) rg () t f t doff v cc = 400v, v ge = 15v, tj =175c ic = 60 a t r t don am17158v1 0 10 20 30 40 50 0 500 1000 1500 2000 i rm (a) di/dt (a/s) v r = 400 v, i f = 60 a t j =25c 175c am17160v1 0 50 100 150 200 0 500 1000 1500 2000 trr (ns) di/dt (a/s) v r = 400v, i f = 60 a 175 c t j =25c am17161v1 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 qrr (nc) di/dt (a/s) v r = 400v, i f = 60 a 175 c t j =25c am17162v1 0 200 400 600 800 1000 1200 1400 0 500 1000 1500 2000 2500 3000 err (j) di/dt (a/s) v cc = 400v, v ge = 15v, i f = 60a 175c t j =25c
docid024154 rev 6 9/16 stgw60v60df, STGWT60V60DF electrical characteristics figure 26. thermal data for igbt figure 27. thermal data for diode zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
test circuits stgw60v60df, STGWT60V60DF 10/16 docid024154 rev 6 3 test circuits figure 28. test circuit for inductive load switching figure 29. gate charge test circuit figure 30. switching waveform figure 31. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
docid024154 rev 6 11/16 stgw60v60df, STGWT60V60DF package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stgw60v60df, STGWT60V60DF 12/16 docid024154 rev 6 figure 32. to-247 drawing 0075325_g
docid024154 rev 6 13/16 stgw60v60df, STGWT60V60DF package mechanical data table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
package mechanical data stgw60v60df, STGWT60V60DF 14/16 docid024154 rev 6 figure 33. to-3p drawing 8045950_a
docid024154 rev 6 15/16 stgw60v60df, STGWT60V60DF revision history 5 revision history table 10. document revision history date revision changes 15-jan-2013 1 initial release. 23-apr-2013 2 added: ? new order code STGWT60V60DF and new package mechanical data to-3p table 9 on page 13 , figure 33 on page 14 . ? section 2.1: electrical characteristics (curves) on page 5 . 04-jun-2013 3 updated table 4: static characteristics and figure 12 on page 6 . document status changed from preliminary to production data. 21-jun-2013 4 updated figure 3: collector current vs. temperature case . 12-jul-2013 5 updated r thjc value for diode in table 3: thermal data . 21-oct-2013 6 updated title, features and description in cover page.
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